Samsung - Samsung
DDR4 - module - 8 GB - SO-DIMM 260-pin - 2666 MHz / PC4-21300 - CL19 - 1.2 V - unbuffered - ECC
Samsung
M474A1K43BB1-CTD
N/A
N/A
New
Product Description
Additional Details
What's Included
Main Specifications | |
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Product Description | Samsung - DDR4 - module - 8 GB - SO-DIMM 260-pin - 2666 MHz / PC4-21300 - unbuffered |
Product Type | Memory module |
Capacity | 8 GB |
Memory Type | DDR4 SDRAM - SO-DIMM 260-pin |
Upgrade Type | Generic |
Data Integrity Check | ECC |
Speed | 2666 MHz (PC4-21300) |
Latency Timings | CL19 (19-19-19) |
Features | Single rank, On-Die Termination (ODT), sixteen banks, unbuffered |
Voltage | 1.2 V |
General | |
Capacity | 8 GB |
Upgrade Type | Generic |
Width | 2.7 in |
Depth | 0.1 in |
Height | 1.2 in |
Memory | |
Type | DRAM memory module |
Technology | DDR4 SDRAM |
Form Factor | SO-DIMM 260-pin |
Module Height (inch) | 1.18 |
Speed | 2666 MHz (PC4-21300) |
Latency Timings | CL19 (19-19-19) |
Data Integrity Check | ECC |
Features | Single rank, On-Die Termination (ODT), sixteen banks, unbuffered |
Module Configuration | 1024 X 72 |
Chips Organization | 1024 x 8 |
Voltage | 1.2 V |
Miscellaneous | |
Compliant Standards | RoHS, Lead-Free, Halogen-free, JEDEC |